| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,414 pcs
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1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies SGW20N60 is a high-performance NPT IGBT transistor suitable for various power switching applications. It features a maximum collector current of 40A and a collector-emitter voltage of 600V, with a power dissipation rating of 179W.
This IGBT is designed with a standard input type and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a Vce(on) of 2.4V at 15V and 20A, a gate charge of 100 nC, and switching energies of 440µJ (on) and 330µJ (off). The test conditions for these parameters are 400V, 20A, 16Ohm, and 15V.
The SGW20N60 comes in a PG-TO247-3-21 package and utilizes through-hole mounting. Its robust construction and specifications make it a reliable choice for demanding power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SGW20N60 has a collector-emitter voltage rating of 600V.
The SGW20N60 has a continuous collector current rating of 40A.
The SGW20N60 is packaged in a TO-247-3 through-hole package.
The SGW20N60 operates over a junction temperature range of -55°C to 150°C.
The SGW20N60 has a maximum power dissipation of 179W.
The SGW20N60 has a gate charge of 100nC.
The SGW20N60 is an NPT (Non-Punch Through) IGBT.