| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies SGW15N120 is a high-performance NPT-technology Fast IGBT transistor. It is designed for demanding applications such as motor controls, inverters, and switch-mode power supplies (SMPS).
Key electrical specifications include a collector-emitter voltage of 1200V and a continuous collector current of 30A at 25°C (15A at 100°C). The device offers a power dissipation of 198W at 25°C and features a short circuit withstand time of 10µs. Its NPT technology provides tight parameter distribution, high ruggedness, and stable temperature behavior.
This IGBT is housed in a TO-247-3 package, suitable for through-hole mounting. The operating junction and storage temperature range is -55°C to 150°C. It is qualified according to JEDEC standards for target applications and features Pb-free lead plating, making it RoHS compliant.
With a 40% lower Eoff compared to previous generations, the SGW15N120 is optimized for efficiency in power conversion systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
TO-247-3 through-hole package.
-55°C to 150°C.
30A at TC=25°C and 15A at TC=100°C.
198W at TC=25°C.
±20V.
Yes, 10µs withstand time.