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SGT60N60FD1PN The SILAN SGT60N60FD1PN is a 600V, 60A Insulated Gate Bipolar Transistor (IGBT) designed for applications like UPS, SMPS, and PFC. It comes in a TO-3P package.
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SGT60N60FD1PN

Available from 1 distributors
Mfr Name: Silan
Silan
The SILAN SGT60N60FD1PN is a 600V, 60A Insulated Gate Bipolar Transistor (IGBT) designed for applications like UPS, SMPS, and PFC. It comes in a TO-3P package.
✓ Total Stock: 1,340 pcs

SGT60N60FD1PN Available from 1 distributor

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SGT60N60FD1PN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Input Capacitance
Mounting Type
Package / Case
Power Dissipation
SVHC Present
Storage Temperature
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SGT60N60FD1PN Description

Short technical summary and product information.

The SILAN SGT60N60FD1PN is an Insulated Gate Bipolar Transistor (IGBT) manufactured using a Field Stop process, offering low conduction and switching losses. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 60A at 100°C (120A at 25°C).

 

Key electrical characteristics include a typical collector-emitter saturation voltage of 2.2V at 60A and 15V gate-emitter voltage (at 25°C). The device features a typical input capacitance of 2850pF and a fast switching speed with a turn-on delay of 36ns and turn-off delay of 193ns.

 

This IGBT is housed in a TO-3P package, suitable for through-hole mounting. Its design makes it applicable in power supply systems such as Uninterruptible Power Supplies (UPS), Switched-Mode Power Supplies (SMPS), and Power Factor Correction (PFC) circuits. The operating junction temperature range is -55°C to +150°C.

 

The integrated fast recovery diode (FRD) exhibits a typical forward voltage of 1.9V at 30A and a reverse recovery time of 38ns.

SGT60N60FD1PN Quick Information

Product Type: Insulated Gate Bipolar Transistor
Canonical Name: SILAN SGT60N60FD1PN Insulated Gate Bipolar Transistor
Subcategory: Single IGBT

SGT60N60FD1PN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SGT60N60FD1PN Features

  • 600V collector-emitter voltage rating.
  • 60A continuous collector current.
  • Low conduction and switching losses.
  • Fast switching speed.
  • TO-3P package for through-hole mounting.

SGT60N60FD1PN Applications

  • Used in motor drive inverters.
  • Suitable for uninterruptible power supplies.
  • Ideal for induction heating systems.
  • Applied in welding machines.

SGT60N60FD1PN FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SGT60N60FD1PN?

600V.

What is the package type of the SGT60N60FD1PN?

TO-3P.

What is the operating junction temperature range?

-55°C to +150°C.

What is the maximum collector current at 25°C?

120A.

What is the typical gate-emitter threshold voltage?

5.0V.

What is the total switching energy at 400V, 60A?

5.49mJ typical.

Does the SGT60N60FD1PN include an integrated diode?

Yes, it includes a fast recovery diode with typical forward voltage of 1.9V at 30A.

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