| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The STMicroelectronics SGSD200 is a PNP power transistor in a monolithic Darlington configuration, housed in a TO-247 plastic package. It is engineered for general purpose and high current amplifier applications, as well as DC-AC converters and low voltage DC motor drivers.
Key electrical specifications include a collector-emitter voltage of 80V, a continuous collector current rating of 25A, and a peak collector current of 40A. The device offers a maximum power dissipation of 130W at 25°C case temperature and a thermal resistance junction-to-case of 0.96°C/W. The Darlington configuration provides high current gain, with a typical DC current gain (hFE) of 5000 at 5A and 3V.
This transistor is suitable for applications requiring robust power handling and amplification. Its through-hole mounting type and TO-247 package facilitate integration into various circuit designs. The operating junction temperature ranges from -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V
25A continuous, 40A peak
130W at case temperature 25°C
TO-247-3 through-hole
-65°C to 150°C
Typical 8000, minimum 500