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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,000 pcs
|
34000 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cut-Off Current | |
| Collector Emitter Breakdown Voltage (@ VGE = 0 V, IC = 1 mA) | |
| Collector Emitter Breakdown Voltage (Maximum) | |
| Collector Emitter Saturation Voltage (@ IC = 130 A, VGE = 4.5 V) | |
| Collector Emitter Saturation Voltage (Maximum @ Vge, Ic = 4.5 V, 130 A) | |
| Current | |
| Fall Time | |
| Gate-Emitter Leakage Current | |
| Gate-Emitter Threshold Voltage | |
| Gate-Emitter Voltage | |
| IGBT Type | |
| Input Capacitance | |
| Input Type | |
| Junction to Case Thermal Resistance | |
| Junction-to-Ambient Thermal Resistance (PCB Mount) | |
| Maximum power dissipation | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Pulsed Collector Current | |
| Reverse Transfer Capacitance | |
| Rise Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Turn-Off Delay Time | |
| Turn-On Delay Time | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The SGR15N40LTF is an Insulated Gate Bipolar Transistor (IGBT) from ON Semiconductor, featuring a trench gate structure for enhanced conduction and switching performance. This device is rated for a collector-emitter voltage of 400V and can handle a pulsed collector current of up to 130A, with a maximum power dissipation of 45W at 25°C.
Key electrical characteristics include a gate-emitter threshold voltage between 0.5V and 1.4V, and a collector-emitter saturation voltage of up to 8V at 130A and 4.5V gate drive. Dynamic characteristics such as turn-on delay time, rise time, turn-off delay time, and fall time are also specified, indicating efficient switching capabilities.
The IGBT is housed in a TO-252AA (D-PAK) surface-mount package, suitable for applications requiring compact designs. It operates within a junction temperature range of -40°C to +150°C, with a junction-to-case thermal resistance of 3.0°C/W and a junction-to-ambient resistance of 50°C/W when mounted on a PCB.
This IGBT is particularly suitable for strobe flash applications due to its high input impedance and high peak current capability, making it a robust choice for demanding electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 400V.
The SGR15N40LTF is available in a TO-252-3 (DPak) surface mount package, also known as SC-63, with supplier device package TO-252AA.
The operating junction temperature range is -40°C to 150°C.
130A.
45W at 25°C case temperature.
0.5V to 1.4V.