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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
143 pcs
|
143 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cut-Off Current | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current Collector (Typical @ TC = 100 °C) | |
| Current Collector (Typical @ TC = 25 °C) | |
| Diode Continuous Forward Current | |
| Diode Maximum Forward Current | |
| Fall Time | |
| G-E Leakage Current | |
| G-E Threshold Voltage | |
| Gate Charge | |
| Gate-Emitter Voltage | |
| Input Capacitance | |
| Input Type | |
| Maximum Lead Temp. for Soldering | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation Max (Maximum @ TC = 100 °C) | |
| Power Dissipation Max (Maximum @ TC = 25 °C) | |
| Pulsed Collector Current | |
| Reverse Recovery Time (trr) | |
| Reverse Transfer Capacitance | |
| Rise Time | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance Junction-to-Case (Diode) | |
| Thermal Resistance Junction-to-Case (IGBT) | |
| Time Delay Turn On (Typical @ VCC = 300 V, IC = 12 A, RG = 23Ω , VGE = 15 V, Inductive Load...) | |
| Time Delay Turn On (Unspecified condition) | |
| Time Reverse Recovery | |
| Total Switching Loss | |
| Turn off Switching Loss | |
| Turn-Off Delay Time | |
| Turn-On Switching Loss | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| Voltage Saturation Collector Emitter (Typical @ IC = 12 A, VGE = 15 V) | |
| Voltage Saturation Collector Emitter (Typical @ IC = 23 A, VGE = 15 V) |
The SGP23N60UFDTU is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, designed for applications requiring high-speed switching, such as motor controls and general inverters.
This IGBT features a collector-emitter voltage of 600V and a continuous collector current of 23A at 25°C. It offers low conduction and switching losses, with a low saturation voltage (VCE(sat)) of 2.1V typical at 12A and 15V gate-emitter voltage. The device also boasts a typical turn-on delay time of 17ns and a fall time of 70ns.
Packaged in a standard TO-220-3 configuration, the SGP23N60UFDTU is suitable for through-hole mounting. Its operating junction temperature ranges from -55°C to +150°C, with a maximum power dissipation of 100W at 25°C.
Applications include AC & DC motor controls, general purpose inverters, robotics, and servo controls.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 600V.
The continuous collector current is 23A at 25°C.
The maximum power dissipation is 100W at 25°C.
The operating junction temperature range is -55°C to +150°C.
It is supplied in a TO-220-3 package.
The typical turn-on delay time is 17ns.
The typical fall time is 70ns.