| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16,000 pcs
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16000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
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| Vce(on) (Max) @ Vge, Ic | |
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The SGP15N60RUFTU from On Semiconductor is a Short Circuit Rated IGBT transistor belonging to the RUF series. This series is engineered for applications such as motor control, UPS, and general inverters where robust short-circuit handling is essential.
Key electrical specifications include a Collector-Emitter Voltage (VCES) of 600V and a continuous Collector Current (IC) of 24A at 25°C, derating to 15A at 100°C. The device offers a low saturation voltage (VCE(sat)) of 2.2V typical at 15A and 15V VGE. It also features a maximum power dissipation of 160W at 25°C.
Switching characteristics are notable, with a turn-on delay time of 17ns and a turn-off delay time of 44ns at 25°C, and slightly longer at 125°C. Switching losses are specified at 320µJ for turn-on and 356µJ for turn-off at 25°C.
Packaged in a TO-220-3 configuration, the SGP15N60RUFTU is designed for through-hole mounting. The operating junction temperature range is -55°C to +150°C, with a storage temperature range also spanning -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The continuous collector current is 24A at 25°C and 15A at 100°C.
The maximum power dissipation is 160W at 25°C.
The operating junction temperature range is -55°C to +150°C.
The SGP15N60RUFTU is supplied in a TO-220-3 package.
The SGP15N60RUFTU is designed for through-hole mounting.
The typical collector to emitter saturation voltage is 2.2V at 15A and 15V VGE.