| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,299 pcs
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1299 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Infineon SGP15N120 is a Fast Insulated Gate Bipolar Transistor (IGBT) utilizing NPT-technology. It is designed for demanding applications such as motor controls, inverters, and Switched-Mode Power Supplies (SMPS).
Key electrical specifications include a maximum collector-emitter voltage (VCE) of 1200V and a continuous collector current (IC) of 15A at 100°C case temperature, with a peak pulsed collector current of 52A. The transistor offers a low Eoff of 1.5mJ, which is 40% lower than previous generations, and a short circuit withstand time of 10μs. The gate-emitter voltage (VGE) is rated at ±20V.
Thermal performance is supported by a maximum power dissipation (Ptot) of 198W at 25°C case temperature. The operating junction and storage temperature range is -55°C to +150°C. Thermal resistance from junction to case (RthJC) is 0.63 K/W.
Available in PG-TO-220-3-1 and PG-TO-247-3 packages, the SGP15N120 is suitable for through-hole mounting. It is RoHS compliant and designed for high ruggedness and temperature-stable behavior.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCE) for the SGP15N120 is 1200V.
The continuous collector current (IC) is 30A at 25°C case temperature and 15A at 100°C case temperature.
The maximum power dissipation (Ptot) is 198W at 25°C case temperature.
The operating junction and storage temperature range is -55°C to +150°C.
The SGP15N120 is available in PG-TO-220-3-1 and PG-TO-247-3 packages.
The short circuit withstand time (tSC) is 10μs.
Yes, the SGP15N120 is RoHS3 Compliant.