SGP13N60UFDTU The ON Semiconductor SGP13N60UFDTU is an Ultra-Fast IGBT designed for high-speed switching applications. It features a 600V collector-emitter voltage and a 13A collector current.
Mfr Part #:

SGP13N60UFDTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SGP13N60UFDTU is an Ultra-Fast IGBT designed for high-speed switching applications. It features a 600V collector-emitter voltage and a 13A collector current.
Total Stock: 2,861 pcs
$ Price Range: $0.99

SGP13N60UFDTU Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,861 pcs
2861 pcs On Request 1 On Request On Request 07+ On Request On Request

SGP13N60UFDTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cut-Off Current
Collector Emitter Saturation Voltage (Typical @ IC = 13 A, VGE = 15 V)
Collector Emitter Saturation Voltage (Typical @ IC = 6.5 A, VGE = 15 V)
Collector-Emitter Breakdown Voltage
Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Fall Time
G-E Leakage Current
G-E Threshold Voltage
Gate Charge
Gate-Emitter Voltage
Input Capacitance
Input Type
Maximum Lead Temp. for Soldering
Mounting Type
Operating Temperature
Output Capacitance
Power
Power Dissipation (Maximum @ TC=100 °C)
Power Dissipation (Maximum @ TC=25 °C)
Pulsed Collector Current
Reverse Recovery Time (trr)
Reverse Transfer Capacitance
Rise Time
Storage Temperature
Supplier Device Package
Switching Energy
Td (on
Temperature Coefficient of Breakdown Voltage
Test Condition
Thermal Resistance - Junction to Case (Typical)
Thermal Resistance Junction-to-Ambient
Total Switching Loss
Turn off Switching Loss
Turn-Off Delay Time
Turn-On Delay Time
Turn-On Switching Loss
Vce(on) (Max) @ Vge, Ic
Voltage
current (Maximum @ TC = 100 °C)

SGP13N60UFDTU Description

Short technical summary and product information.

The SGP13N60UFDTU from ON Semiconductor is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) from their UFD series. This series is engineered for applications demanding high-speed switching, such as motor controls and general inverters. It offers low conduction and switching losses, making it an efficient choice for demanding electronic designs.

 

Key electrical specifications include a collector-emitter voltage of 600V, a continuous collector current of 13A at 25°C (6.5A at 100°C), and a maximum power dissipation of 60W at 25°C. The device exhibits a low saturation voltage of 2.1V typical at 6.5A and features integrated fast recovery diode (FRD) with a typical reverse recovery time of 37ns.

 

This IGBT is housed in a TO-220-3 package and supports through-hole mounting. It operates within a junction temperature range of -55°C to +150°C. The SGP13N60UFDTU is suitable for applications like AC/DC motor controls, general-purpose inverters, robotics, and servo controls, where high speed and reliability are critical.

SGP13N60UFDTU Quick Information

Product Type: IGBT Transistor
Series: UFD
Canonical Name: SGP13N60UFDTU Ultra-Fast IGBT
Subcategory: Single

SGP13N60UFDTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SGP13N60UFDTU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SGP13N60UFDTU Features

  • Ultra-Fast IGBT for high-speed switching.
  • 600V collector-emitter voltage rating.
  • 13A continuous collector current.
  • Low saturation voltage and switching losses.
  • TO-220-3 package for through-hole mounting.

SGP13N60UFDTU Applications

  • Used in AC and DC motor controls.
  • Suitable for general purpose inverters.
  • Applied in robotics and servo controls.
  • Designed for high-speed switching circuits.

SGP13N60UFDTU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SGP13N60UFDTU?

The maximum collector-emitter voltage is 600V.

What is the continuous collector current rating at 25°C?

The continuous collector current is 13A at a case temperature of 25°C.

What package type is the SGP13N60UFDTU available in?

It is available in a TO-220-3 through-hole package.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Does the SGP13N60UFDTU include a co-packaged diode?

Yes, it includes a co-packaged diode with a continuous forward current rating of 8A at 100°C.

What is the typical gate charge of this IGBT?

The typical gate charge is 25nC.

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