| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17,000 pcs
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17000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
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The SGP10N60RUFDTU from ON Semiconductor is a single Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This device offers a robust 600V collector-emitter voltage and can handle up to 16A of continuous collector current.
Key electrical characteristics include a maximum power dissipation of 75W and a low on-state voltage drop of 2.8V at 15V gate-emitter voltage and 10A collector current. The switching characteristics are defined by a turn-on delay of 15ns and a turn-off delay of 36ns, with switching energies of 141µJ (on) and 215µJ (off) under specified test conditions. The gate charge is rated at 30nC.
This IGBT is housed in a standard TO-220-3 package, facilitating through-hole mounting on printed circuit boards. It operates within a wide temperature range of -55°C to 150°C (TJ), making it suitable for various environmental conditions. The standard input type ensures compatibility with common gate drive circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SGP10N60RUFDTU has a collector-emitter voltage rating of 600V.
The SGP10N60RUFDTU can handle a maximum continuous collector current of 16A.
The SGP10N60RUFDTU is supplied in a TO-220-3 package.
The SGP10N60RUFDTU is designed for through-hole mounting.
The operating temperature range for the SGP10N60RUFDTU is -55°C to 150°C (TJ).