| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,500 pcs
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6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce(on) (Max) @ Vge, Ic | |
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The Infineon Technologies SGP10N60A is a Fast Insulated Gate Bipolar Transistor (IGBT) designed for various power switching applications. This component offers a robust 600V collector-emitter voltage rating and can handle a maximum collector current of 20A.
Key electrical characteristics include a maximum power dissipation of 92W and a Vce(on) of 2.4V at 15V gate voltage and 10A collector current. The IGBT type is NPT, and it has a standard input type. Switching performance is characterized by a rise time of 15ns and a fall time of 32ns, with a switching energy of 320µJ.
Packaged in a TO-220-3 configuration, the SGP10N60A is designed for through-hole mounting. It operates within a wide temperature range of -55°C to 150°C.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The part is suitable for applications requiring reliable high-voltage switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 20A.
The collector-emitter voltage is 600V.
The maximum power dissipation is 92W.
The operating temperature range is -55°C to 150°C.
The SGP10N60A is supplied in a TO-220-3 package.
Yes, the SGP10N60A is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.