L78M05ABDT-TR
ST
The ST L78M05ABDT-TR is a 5V positive voltage regulator from the L78MxxA series. It offers an output current of up to 0.5A and features built-in thermal overload and short circuit protection.
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3,121 pcs
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3121 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon SGP02N120 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) suitable for various power electronics applications. It offers a maximum Collector Emitter Voltage of 1.2kV and a maximum Collector Current of 6.2A. The device has a maximum power dissipation of 42W and operates within a temperature range of -55°C to 150°C.
Packaged in a standard TO-220AB through-hole configuration, the SGP02N120 is designed for easy mounting on printed circuit boards. Its electrical characteristics include a rise time of 24ns and a fall time of 61ns, making it suitable for applications requiring efficient switching.
This IGBT is manufactured by Infineon Technologies and is part of their line of discrete semiconductor products. Its specifications make it a viable option for power supply circuits, motor control, and other industrial applications where high voltage and current handling are necessary.
The SGP02N120 is housed in a TO-220AB through-hole package with 3 terminals.
The operating temperature range is -55°C to 150°C.
The maximum collector-emitter voltage is 1.2kV.
The maximum collector current is 6.2A.
Maximum power dissipation is 42W.
Rise time is 24ns and fall time is 61ns.
