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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,565 pcs
|
6565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,375 pcs
|
2375 pcs | On Request | 1 | On Request | On Request | 1840+ | On Request | On Request | |
|
1,081 pcs
|
1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Pulsed (Icm) | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Td (on/off) @ 25°C | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The SGL160N60UFDTU is a high-performance Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, designed for demanding power applications. It features a robust 600V collector-emitter breakdown voltage and a high continuous collector current rating of 160A, with a pulsed current capability of up to 300A.
The device offers a maximum power dissipation of 250W and a low on-state voltage (Vce(on)) of 2.6V at 15V gate-emitter voltage and 80A collector current, ensuring efficient operation. Switching performance is characterized by a typical turn-on delay of 40ns and turn-off delay of 90ns at 25°C, with a reverse recovery time (trr) of 95ns. The switching energy is rated at 2.5mJ (on) and 1.76mJ (off) under specific test conditions.
Designed for through-hole mounting, the SGL160N60UFDTU comes in a TO-264-3 or TO-264AA package, suitable for applications requiring significant power handling and thermal management. The operating temperature range is from -55°C to 150°C (TJ), making it suitable for a wide array of industrial environments. Proper thermal management, including adequate heat sinks and PCB design, is crucial for optimal performance and reliability in high power dissipation scenarios.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 600 V.
The continuous collector current (Ic) is 160 A.
The maximum power dissipation is 250 W.
The operating temperature range is -55°C to 150°C (TJ).
The device is supplied in a TO-264-3, TO-264AA package.
It is designed for through-hole mounting.
The Vce(on) is a maximum of 2.6V at 15V gate-emitter voltage and 80A collector current.