| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,606 pcs
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1606 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
105 pcs
|
105 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The SGL160N60UFD from ON Semiconductor is an Ultrafast Insulated Gate Bipolar Transistor (IGBT) from their UFD series, engineered for applications demanding high-speed switching capabilities.
This IGBT provides a robust set of electrical characteristics, including a 600V collector-emitter voltage (VCES) and a maximum continuous collector current (IC) of 160A at 25°C, derating to 80A at 100°C. It also features a low saturation voltage of 2.1V typical at 80A and a fast diode reverse recovery time of 75nS typical.
With a maximum power dissipation of 250W at 25°C, the SGL160N60UFD is suitable for demanding power applications. The operating junction temperature ranges from -55°C to +150°C, and it is housed in a TO-264 package suitable for through-hole mounting.
Key applications for this IGBT include AC/DC motor controls, general-purpose inverters, robotics, servo controls, and power supplies where efficient and high-speed power conversion is essential.
600V.
TO-264 through-hole.
-55 to +150°C.
2.1V.
75ns typical.
250W.
0.5°C/W typical.