Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Maximum @ TC=100 °C) | |
| Collector Cut-Off Current | |
| Collector to Emitter Saturation Voltage (Typical @ IC = 40 A, VGE = 15 V) | |
| Collector to Emitter Saturation Voltage (Typical @ IC = 80 A, VGE = 15 V) | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Diode Continuous Forward Current | |
| Diode Maximum Forward Current | |
| Fall Time | |
| G-E Leakage Current | |
| G-E Threshold Voltage | |
| Gate Charge | |
| Gate-Emitter Voltage | |
| Input Capacitance | |
| Input Type | |
| Maximum Lead Temp. for Soldering | |
| Maximum Power Dissipation (Maximum @ TC=100 °C) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Pulsed Collector Current | |
| Reverse Recovery Time (trr) | |
| Reverse Transfer Capacitance | |
| Rise Time | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Temperature Coefficient of Breakdown Voltage | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance Junction-to-Case (Diode) | |
| Thermal Resistance Junction-to-Case (IGBT) | |
| Total Switching Loss | |
| Turn off Switching Loss | |
| Turn-Off Delay Time | |
| Turn-On Delay Time (Typical @ VCC = 300 V, IC = 40 A, RG = 5Ω , VGE = 15 V, Inductive Load...) | |
| Turn-On Switching Loss | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The ON Semiconductor SGH80N60UFDTU is an Ultrafast Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. It offers a collector-emitter voltage of 600V and a continuous collector current of 80A at 25°C, with a maximum power dissipation of 195W at 25°C.
This IGBT features low conduction and switching losses, with a low saturation voltage of 2.1V at 40A. Key electrical characteristics include a typical input capacitance of 2790pF and a reverse recovery time of 95ns. The device is suitable for applications such as AC & DC motor controls, general purpose inverters, robotics, and servo controls.
The SGH80N60UFDTU is housed in a TO-3P package and supports through-hole mounting. It operates within a junction temperature range of -55°C to 150°C. The component is designed for applications requiring high speed switching and reliable performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-3P-3 (SC-65-3) through-hole.
-55°C to 150°C.
80A at case temperature 25°C.
175nC.
Turn-on delay 23ns, rise time 50ns, turn-off delay 90ns, fall time 50ns.
195W at case temperature 25°C.