Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,013 pcs
|
2013 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Typical @ TC = 100 °C) | |
| Collector Cut-Off Current | |
| Collector To Emitter Saturation Voltage (Typical @ IC = 15 A, VGE = 15 V) | |
| Collector To Emitter Saturation Voltage (Typical @ IC = 24 A, VGE = 15 V) | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Diode Continuous Forward Current | |
| Diode Maximum Forward Current | |
| Fall Time | |
| G-E Leakage Current | |
| G-E Threshold Voltage | |
| Gate Charge | |
| Gate-Emitter Voltage | |
| Input Capacitance | |
| Input Type | |
| Maximum Lead Temp. for Soldering | |
| Maximum Power Dissipation (Maximum @ TC=100 °C) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Pulsed Collector Current | |
| Reverse Recovery Time (Typical) | |
| Reverse Recovery Time (trr) | |
| Reverse Transfer Capacitance | |
| Rise Time | |
| Short Circuit Withstand Time | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Td (on/off) | |
| Temperature Coefficient of Breakdown Voltage | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance Junction-to-Case (Diode) | |
| Thermal Resistance Junction-to-Case (IGBT) | |
| Turn-Off Delay Time | |
| Turn-On Delay Time | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The SGH15N60RUFDTU is an Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, designed for applications requiring low conduction and switching losses along with short circuit ruggedness. This device features a collector-emitter voltage of 600V and a continuous collector current of 24A at 25°C.
Key electrical characteristics include a typical collector-emitter saturation voltage of 2.2V at 15A and 15V gate-emitter voltage. The IGBT exhibits a typical turn-on delay time of 17ns and a turn-off delay time of 44ns, with a fall time of 118ns. Its input capacitance is 948pF, and output capacitance is 101pF.
The device is housed in a TO-3P package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C. The IGBT is rated for a maximum power dissipation of 160W at 25°C and is designed for applications such as AC/DC motor controls, general-purpose inverters, robotics, and servo controls.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
24A at TC=25°C, 15A at TC=100°C.
160W at TC=25°C, 64W at TC=100°C.
TO-3P-3 (SC-65-3) through-hole package.
-55°C to 150°C.
6.0V typical (5.0V min, 8.5V max).
320µJ turn-on and 356µJ turn-off at 300V, 15A, inductive load.