| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The Infineon Technologies SGD02N60 is a single N-channel IGBT transistor designed for power switching applications. It features a 600V collector-emitter voltage and a continuous current rating of 6A, with a power dissipation of 30W.
This IGBT is of the NPT (Non-Punch-Through) type, offering robust performance. Key electrical characteristics include a collector-emitter saturation voltage of 2.4V at 2A and 15V gate-emitter voltage, a gate charge of 14 nC, and switching times of 20ns turn-on and 259ns turn-off. The switching energy is rated at 36µJ for turn-on and 28µJ for turn-off.
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 (PG-TO252-3-11) format, the SGD02N60 is suitable for surface mounting. It operates across a wide temperature range from -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V collector-emitter voltage.
TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
-55°C to 150°C (junction temperature).
6A.
Maximum 2.4V at 15V gate, 2A collector current.
Turn-on 36 µJ, turn-off 28 µJ.