SGB10N60A The Infineon Technologies SGB10N60A is a Fast IGBT transistor designed for 600V applications. It offers a 20A current rating and 92W power dissipation.
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SGB10N60A

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Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SGB10N60A is a Fast IGBT transistor designed for 600V applications. It offers a 20A current rating and 92W power dissipation.
✓ Total Stock: 9 pcs
$ Price Range: $0.99

SGB10N60A Available from 1 distributor

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SGB10N60A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Power Dissipation
SVHC Present
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

SGB10N60A Description

Short technical summary and product information.

The Infineon Technologies SGB10N60A is a Fast IGBT in NPT-technology, designed for 600V applications. This component features a collector-emitter voltage of 600V and a DC collector current of 20A at 25°C, with a pulsed collector current of 40A.

 

Key electrical characteristics include a typical saturation voltage of 2.4V at 15V gate-emitter voltage and 10A collector current, and a gate charge of 52nC. The device offers a power dissipation of 92W at 25°C and operates within a junction temperature range of -55°C to 150°C.

 

Designed for applications such as motor controls and inverters, this IGBT utilizes NPT-Technology for tight parameter distribution, high ruggedness, and stable temperature behavior. It is available in a TO-263AB surface mount package.

 

Additional specifications include a short circuit withstand time of 10µs and thermal resistance values such as 1.35 K/W for junction-to-case.

SGB10N60A Quick Information

Product Type: Transistor - IGBT
Canonical Name: Infineon Technologies SGB10N60A NPT Fast IGBT
Subcategory: Single

SGB10N60A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SGB10N60A Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SGB10N60A Features

  • 600V collector-emitter voltage rating.
  • 20A continuous collector current.
  • 92W maximum power dissipation.
  • TO-263AB surface mount package.
  • NPT-Technology for high ruggedness.

SGB10N60A Applications

  • Designed for motor controls.
  • Suitable for inverter applications.
  • Used in power switching circuits.

SGB10N60A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SGB10N60A?

The maximum collector-emitter voltage is 600V.

What is the continuous collector current rating?

The DC collector current is 20A at 25°C and 10.6A at 100°C.

What is the power dissipation of the SGB10N60A?

The power dissipation is 92W at 25°C.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SGB10N60A supplied in?

The SGB10N60A is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

What is the typical saturation voltage?

The typical collector-emitter saturation voltage is 2V at 15V gate-emitter voltage and 10A collector current at 25°C.

What is the gate charge for this IGBT?

The gate charge is 52nC under test conditions of 480V, 10A, and 15V.

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