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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (Single Pulse) | |
| Capacitance | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Gate Charge | |
| Gate Charge (Unspecified condition) | |
| Gate-Emitter Threshold Voltage | |
| IGBT Type | |
| Input Type | |
| Leakage Current (Maximum @ VCE =0 V, VGE =20 V) | |
| Leakage Current (Maximum @ VCE =600 V, VGE =0 V, Tj =150 °C) | |
| Leakage Current (Maximum @ VCE =600 V, VGE =0 V, Tj =25 °C) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| SVHC Present | |
| Saturation Voltage (Typical/Maximum @ VGE = 15 V, IC =10 A, Tj =150 °C) | |
| Saturation Voltage (Typical/Maximum @ VGE = 15 V, IC =10 A, Tj =25 °C) | |
| Short Circuit Withstand Time | |
| Short circuit collector current | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Thermal Resistance (Maximum @ SMD version, device on PCB) | |
| Thermal Resistance (Maximum @ TO -220 AB) | |
| Thermal Resistance (Maximum @ TO -247 AC) | |
| Thermal Resistance (Maximum) | |
| Transconductance | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| Voltage - Maximum | |
| capacitance (Typical @ VCE =25 V, VGE =0 V, f=1 MHz) | |
| current (Maximum @ TC = 100 °C) | |
| current (Maximum @ tp limited by Tjmax) | |
| inductance (Typical @ measured 5 mm (0.197 in.) from case, TO -220 AB) | |
| inductance (Typical @ measured 5 mm (0.197 in.) from case, TO -247 AC) |
The Infineon Technologies SGB10N60A is a Fast IGBT in NPT-technology, designed for 600V applications. This component features a collector-emitter voltage of 600V and a DC collector current of 20A at 25°C, with a pulsed collector current of 40A.
Key electrical characteristics include a typical saturation voltage of 2.4V at 15V gate-emitter voltage and 10A collector current, and a gate charge of 52nC. The device offers a power dissipation of 92W at 25°C and operates within a junction temperature range of -55°C to 150°C.
Designed for applications such as motor controls and inverters, this IGBT utilizes NPT-Technology for tight parameter distribution, high ruggedness, and stable temperature behavior. It is available in a TO-263AB surface mount package.
Additional specifications include a short circuit withstand time of 10µs and thermal resistance values such as 1.35 K/W for junction-to-case.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The DC collector current is 20A at 25°C and 10.6A at 100°C.
The power dissipation is 92W at 25°C.
The operating junction and storage temperature range is -55°C to 150°C.
The SGB10N60A is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The typical collector-emitter saturation voltage is 2V at 15V gate-emitter voltage and 10A collector current at 25°C.
The gate charge is 52nC under test conditions of 480V, 10A, and 15V.