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SG3081J/883B The Philips SG3081J/883B is an NPN transistor array with 7 devices in an SO package. It offers a typical collector current of 30mA and a breakdown voltage of 16V.
Mfr Part #:

SG3081J/883B

Available from 1 distributors
Mfr Name: Philips
Philips
The Philips SG3081J/883B is an NPN transistor array with 7 devices in an SO package. It offers a typical collector current of 30mA and a breakdown voltage of 16V.
✓ Total Stock: 8 pcs
$ Price Range: $0.75

SG3081J/883B Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
8 pcs
On Request
8 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SG3081J/883B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Lead Style
Military Grade
Power Dissipation
Transistor Type
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SG3081J/883B Description

Short technical summary and product information.

The SG3081J/883B from Philips is a silicon NPN transistor array featuring 7 integrated devices within a single SO package. This component is designed for specialized integrated circuit applications.

 

Key electrical characteristics include a typical collector current of 30mA at 5.0V V(CE) and a minimum collector-emitter breakdown voltage of 16V. The minimum static current gain (hFE) is rated at 15. The maximum power dissipation is 750mW, and the maximum collector cutoff current is 6.0µA.

 

The device is housed in an SO package, suitable for various surface-mount applications. Its construction and specifications make it a component for circuits requiring multiple NPN transistors in a compact form factor.

SG3081J/883B Quick Information

Product Type: Transistor Array
Series: SG3081
Canonical Name: SG3081J/883B NPN Transistor Array
Subcategory: Specialized ICs

SG3081J/883B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SG3081J/883B Estimated Pricing

Qty Low High
1+ $0.75 $0.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

SG3081J/883B Features

  • NPN transistor array with 7 devices.
  • Typical collector current of 30mA.
  • Minimum collector-emitter breakdown voltage of 16V.
  • SO package for surface mounting.
  • Silicon semiconductor material.

SG3081J/883B Applications

  • Ideal for high-density transistor array designs.
  • Suitable for switching and amplification circuits.
  • Used in applications requiring multiple matched transistors.
  • Can be employed in driver and logic interface circuits.

SG3081J/883B FAQs

7 frequently asked questions generated from this part’s specifications.
What package is the SG3081J/883B available in?

SO package.

What type of transistor is the SG3081J/883B?

NPN silicon transistor.

How many transistors are in the SG3081J/883B array?

7 transistors.

What is the maximum collector current of the SG3081J/883B?

100 mA.

What is the power dissipation rating of the SG3081J/883B?

750 mW.

What is the collector-emitter breakdown voltage of the SG3081J/883B?

Minimum 16 V.

What is the minimum static current gain (hFE) of the SG3081J/883B?

15.

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