| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Transistor Type |
The SG2003J/883B from Microsemi Corporation is an NPN Darlington transistor array, categorized as a gate driver. This component is designed for medium current applications, offering a maximum collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 500mA.
Key electrical characteristics include a Vce saturation voltage of 1.6V at 500µA/350mA and a minimum DC current gain (hFE) of 1000 at 350mA/2V. The device operates within a wide temperature range, from -55°C to 125°C.
Packaged in a 16-CDIP (0.300", 7.62mm) format, the SG2003J/883B is designed for through-hole mounting. Its robust construction and wide operating temperature make it suitable for various industrial and electronic applications requiring reliable medium current driving capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 125°C.
16-CDIP (0.300", 7.62mm) through-hole package.
50V.
500mA.
1000 at 350mA collector current and 2V VCE.
NPN Darlington, 7 channels.
Through hole.