| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 | |
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Spacing | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SG2003J-883B from Microchip Technology is a bipolar junction transistor array featuring seven NPN Darlington configurations. It is designed for applications requiring a breakdown voltage of up to 50V and can handle a maximum collector current of 500mA. The device exhibits a minimum DC current gain (hFE) of 1000 at 350mA and 2V, with a Vce saturation of 1.6V at 500µA, 350mA.
This transistor array is housed in a 16-CDIP (0.300", 7.62mm) package, suitable for through-hole mounting. It is rated for operation in environments up to 150°C (TJ).
The SG2003J-883B is part of the Discrete Semiconductor Products category, specifically within Transistors - Bipolar (BJT) - Arrays. Its specifications make it suitable for various electronic circuits requiring multiple Darlington transistors with specific electrical characteristics and a through-hole mounting solution.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
16-CDIP (0.300", 7.62mm) through-hole package.
150°C.
7 NPN Darlington transistor array.
500 mA.
1000 at Ic=350mA, Vce=2V.
1.6V at Ib=500µA, Ic=350mA.