| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,300 pcs
|
12300 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The SFT1440-E from On Semiconductor is a single N-Channel MOSFET belonging to the Metal Oxide technology family. It is designed for through-hole mounting and comes in an IPAK/TP package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 1.5A at 25°C. The Rds On is specified as a maximum of 8.1 Ohms at 800mA and 10V gate-source voltage. The drive voltage required is 10V. The device also has an input capacitance (Ciss) of 130 pF at 30V and a gate charge (Qg) of 6.3 nC at 10V.
Thermal characteristics include a maximum power dissipation of 1W (Ta) and 20W (Tc), with an operating temperature range up to 150°C (TJ). The maximum gate-source voltage (Vgs) is ±30V.
This MOSFET is suitable for applications requiring high voltage switching and power management. Its through-hole mounting and IPAK package facilitate integration into various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-251-3 Short Leads, IPak, TO-251AA.
150°C.
1.5A at 25°C ambient temperature.
8.1 Ohms at 800mA and 10V gate drive.
6.3 nC at 10V.
130 pF at 30V.