SFT1202-TL-E The ON Semiconductor SFT1202-TL-E is an NPN bipolar junction transistor designed for discrete semiconductor applications. It features a 150V collector-emitter breakdown voltage and a 2A collector current rating.
Mfr Part #:

SFT1202-TL-E

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SFT1202-TL-E is an NPN bipolar junction transistor designed for discrete semiconductor applications. It features a 150V collector-emitter breakdown voltage and a 2A collector current rating.
Total Stock: 42,300 pcs
$ Price Range: $0.99

SFT1202-TL-E Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
41,600 pcs
41600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
700 pcs
700 pcs On Request 1 On Request On Request 19+ On Request On Request

SFT1202-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Collector Emitter Breakdown (Max)

SFT1202-TL-E Description

Short technical summary and product information.

The ON Semiconductor SFT1202-TL-E is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a maximum collector-emitter breakdown voltage of 150V and can handle a continuous collector current of up to 2A.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 100mA and 5V, and a Vce saturation voltage of 165mV maximum at 100mA and 1A. The transistor operates at a frequency of 140MHz and has a power dissipation rating of 1W.

 

This component is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, facilitating integration into compact PCB designs. The operating temperature range is specified up to 150°C (TJ). The SFT1202-TL-E is supplied in tape and reel packaging.

SFT1202-TL-E Quick Information

Product Type: NPN Transistor
Canonical Name: On Semiconductor SFT1202-TL-E NPN Transistor
Subcategory: Single NPN

SFT1202-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SFT1202-TL-E Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SFT1202-TL-E Features

  • NPN bipolar junction transistor.
  • 150V collector-emitter breakdown voltage.
  • 2A continuous collector current.
  • TO-252 surface mount package.
  • 150°C maximum operating temperature.

SFT1202-TL-E Applications

  • Suitable for general-purpose switching.
  • Used in discrete amplification circuits.
  • Ideal for power management applications.
  • Designed for surface mount assembly.

SFT1202-TL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector current of the SFT1202-TL-E?

The maximum continuous collector current is 2A.

What is the collector-emitter breakdown voltage of the SFT1202-TL-E?

The maximum collector-emitter breakdown voltage is 150V.

What is the package type for the SFT1202-TL-E?

The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package.

What is the operating temperature range for the SFT1202-TL-E?

The maximum junction temperature is 150°C.

What is the DC current gain of the SFT1202-TL-E?

The minimum DC current gain (hFE) is 200 at 100mA collector current and 5V VCE.

What is the transition frequency of the SFT1202-TL-E?

The typical transition frequency is 140MHz.

What is the VCE saturation voltage of the SFT1202-TL-E?

The maximum VCE saturation voltage is 165mV at 100mA base current and 1A collector current.

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