| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SFP2955 from ON Semiconductor is a P-Channel MOSFET designed for power management and switching applications. This component features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 9.4A at case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 300mOhm at 4.7A and 10V gate drive, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The MOSFET operates within a wide temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 49W (Tc).
Packaged in a standard TO-220-3 configuration, the SFP2955 is designed for through-hole mounting. Its specifications make it suitable for various power electronics designs requiring a reliable P-channel switching element.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-220-3 through-hole package.
-55°C to 175°C junction temperature.
4V at 250µA drain current.
300mOhm at 4.7A and 10V gate drive.
9.4A at case temperature.
19nC at 10V gate voltage.