Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (On) | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The SFGH30N60LSDTU is a single PT (Punch Through) IGBT from On Semiconductor, designed for medium-power switching applications. It offers a collector-emitter voltage rating of 600V and a continuous collector current of 60A, with a maximum power dissipation of 480W.
The device features a low Vce(on) of 1.4V maximum at 15V gate-emitter voltage and 30A collector current, and a gate charge of 225nC. Switching energy is 1.1mJ (on) and 21mJ (off) under test conditions of 400V, 30A, 6.8Ω gate resistance, and 15V gate drive. Reverse recovery time is 40ns.
The IGBT is housed in a TO-247-3 through-hole package, suitable for standard PCB mounting. It operates over a junction temperature range of -55°C to 150°C. The input type is standard, making it compatible with typical gate drive circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
60A.
TO-247-3.
-55°C to 150°C (TJ).
1.4V maximum at 15V gate-emitter voltage and 30A collector current.
225nC.
1.1mJ (on) and 21mJ (off) at 400V, 30A, 6.8Ω, 15V.