| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
475,010 pcs
|
475010 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,738 pcs
|
1738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
361 pcs
|
361 pcs | On Request | 1 | On Request | On Request | 2017+ | On Request | On Request |
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The SF1600-TAP is an ultrafast avalanche sinterglass diode from Vishay General Semiconductor, designed for high-voltage switching applications. It features a maximum repetitive peak reverse voltage of 1600V and an average forward current of 1A under half-sine wave conditions. The diode offers a fast reverse recovery time of 75ns, enabling efficient high-frequency operation.
Electrical characteristics include a maximum forward voltage of 3.4V at 1A, a peak forward surge current capability of 30A (10ms half sine wave), and a non-repetitive avalanche energy rating of 10mJ. Reverse leakage current is specified at 5µA at 25°C and 50µA at 125°C. The device operates over a junction temperature range of -55°C to 175°C.
The diode is housed in a hermetically sealed SOD-57 axial-leaded glass envelope with plated axial terminals solderable per MIL-STD-750. It is through-hole mountable and weighs approximately 369 mg. The part is supplied in ammopack (TAP) packaging with 5000 units per pack.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
| 10+ | $1.56 | $1.56 |
| 100+ | $1.09 | $1.09 |
| 500+ | $0.92 | $0.92 |
| 1,000+ | $0.83 | $0.83 |
| 2,500+ | $0.81 | $0.81 |
| 5,000+ | $0.78 | $0.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage (V_RRM) is 1600V.
The average forward current (IF(AV)) is 1A under half sine wave conditions with VR=VRRM and RthJA=45 K/W.
The maximum forward voltage (VF) is 3.4V at a forward current of 1A.
The maximum reverse recovery time (trr) is 75ns.
The diode is packaged in a SOD-57 axial-leaded glass envelope (through-hole).
The junction and storage temperature range is -55°C to 175°C.
The peak forward surge current (IFSM) is 30A for a 10ms half sine wave.