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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,030 pcs
|
4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,566 pcs
|
3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 1103+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF=12 A, Tj=150 °C) | |
| Forward Voltage (Typical/Maximum @ IF=12 A, Tj=25 °C) | |
| I²t Value | |
| Mounting Type | |
| Non-repetitive Peak Forward Current | |
| Operating Temperature | |
| Power Dissipation | |
| RMS Forward Current | |
| Repetitive Peak Forward Current | |
| Repetitive Peak Reverse Voltage | |
| Reverse Current (Typical/Maximum @ VR=600 V, Tj=150 °C) | |
| Reverse Current (Typical/Maximum @ Vr = 600 V, Tj = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Surge Non-repetitive Forward Current | |
| Surge Peak Reverse Voltage | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Capacitance (Typical @ VR=300 V, f=1 MHz) | |
| Total Capacitance (Typical @ VR=600 V, f=1 MHz) | |
| Total Capacitive Charge | |
| Voltage |
The Infineon SDT12S60 is a 600V, 12A silicon carbide (SiC) Schottky diode from the thinQ! family. It is designed for high efficiency power conversion with zero reverse recovery time and no temperature influence on switching behavior.
Key electrical specifications include a typical forward voltage of 1.5V at 12A and 25°C, a maximum forward voltage of 1.7V, and a low total capacitive charge of 30 nC. The diode can handle a surge non-repetitive forward current of 36A and has a maximum junction temperature of 175°C.
The device is housed in a PG-TO220-2-2 through-hole package and is suitable for applications requiring high frequency and high efficiency rectification.
| Qty | Low | High |
|---|---|---|
| 500+ | $8.31 | $8.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage (VRRM) is 600V.
The continuous forward current is 12A at a case temperature of 100°C.
At 12A and 25°C, the typical forward voltage is 1.5V and the maximum is 1.7V.
No, as a SiC Schottky diode it has zero reverse recovery time (trr = 0 ns).
The diode is in a PG-TO220-2-2 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The typical total capacitive charge (Qc) is 30 nC under specified test conditions.