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SDT04S60 The Infineon Technologies SDT04S60 is a Silicon Carbide Schottky Diode with a 600V reverse voltage rating and 4A continuous forward current. It is housed in a TO-220-2 package.
Mfr Part #:

SDT04S60

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SDT04S60 is a Silicon Carbide Schottky Diode with a 600V reverse voltage rating and 4A continuous forward current. It is housed in a TO-220-2 package.
✓ Total Stock: 857 pcs
$ Price Range: $0.99

SDT04S60 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
857 pcs
On Request
857 pcs On Request 1 On Request On Request 0825+ On Request On Request
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SDT04S60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Continuous Forward Current
Current
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time (trr)
Speed
Supplier Device Package
Technology
Voltage
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SDT04S60 Description

Short technical summary and product information.

The Infineon Technologies SDT04S60 is a high-performance Silicon Carbide (SiC) Schottky diode designed for demanding applications. It features a 600V repetitive peak reverse voltage and a continuous forward current of 4A at 100°C.

 

Key electrical characteristics include a typical forward voltage of 1.9V at 4A and 25°C, and a very low reverse leakage current of 200µA at 600V and 25°C. Notably, this diode exhibits no reverse recovery time, a significant advantage for high-frequency switching applications, and its switching behavior is not influenced by temperature.

 

The device is packaged in a standard TO-220-2 (PG-TO220-2-2) through-hole configuration, making it suitable for various power electronics designs. The operating junction temperature ranges from -55°C to 175°C, providing robustness in harsh environments.

 

This SiC Schottky diode is ideal for applications requiring efficient power conversion, such as power factor correction up to 800W, switch-mode power supplies, and solar inverters.

SDT04S60 Quick Information

Product Type: Silicon Carbide Schottky Diode
Series: CoolSiC™+
Canonical Name: Infineon Technologies SDT04S60 Silicon Carbide Schottky Diode
Subcategory: Rectifier

SDT04S60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SDT04S60 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SDT04S60 Features

  • 600V repetitive peak reverse voltage.
  • 4A continuous forward current.
  • 1.9V typical forward voltage at 4A.
  • Zero reverse recovery time.
  • TO-220-2 through-hole package.

SDT04S60 Applications

  • Ideal for power factor correction.
  • Suitable for switch-mode power supplies.
  • Used in solar inverter designs.
  • High-frequency switching applications.

SDT04S60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum repetitive peak reverse voltage of the SDT04S60?

The maximum repetitive peak reverse voltage is 600V.

What is the continuous forward current rating of the SDT04S60?

The continuous forward current is 4A at a case temperature of 100°C.

What is the forward voltage drop of the SDT04S60 at 4A?

The maximum forward voltage is 1.9V at 4A and 25°C junction temperature.

Does the SDT04S60 have a reverse recovery time?

The SDT04S60 has zero reverse recovery time (trr = 0 ns).

What package is the SDT04S60 available in?

The SDT04S60 is available in a TO-220-2 through-hole package (PG-TO220-2-2).

What is the operating temperature range of the SDT04S60?

The operating junction temperature range is -55°C to 175°C.

What is the maximum reverse leakage current of the SDT04S60 at 600V?

The maximum reverse leakage current is 200 µA at 600V and 25°C.

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