| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon SDP20S30 is a silicon carbide (SiC) Schottky diode array featuring a common cathode configuration with two diodes per package. It is rated for a repetitive peak reverse voltage of 300V and a continuous forward current of 10A per leg at a case temperature of 100°C. The device offers zero reverse recovery time, enabling high-frequency switching with minimal losses.
Key electrical characteristics include a typical forward voltage of 1.5V at 25°C and 10A, and a low total capacitive charge of 23 nC. The diode operates over a junction temperature range of -55°C to 175°C, with a maximum thermal resistance of 2.3 K/W per leg. The surge non-repetitive forward current is rated at 36A.
The SDP20S30 is housed in a through-hole TO-220-3 package (PG-TO220-3-1), suitable for power supply and power conversion applications where high efficiency and fast switching are required.
The maximum repetitive peak reverse voltage (VRRM) is 300V per leg.
The continuous forward current (IF) is 10A per leg at a case temperature of 100°C.
The typical forward voltage (VF) is 1.5V at IF=10A and Tj=25°C, with a maximum of 1.7V.
No, as a SiC Schottky diode, it has zero reverse recovery time (trr = 0 ns).
The SDP20S30 is available in a through-hole TO-220-3 package (PG-TO220-3-1).
The operating junction temperature range is -55°C to 175°C.
The total capacitive charge (Qc) is 23 nC typical at VR=200V, IF=10A, and Tj=150°C.