| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The Infineon SDP06S60 is a 600V, 6A Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion. It utilizes SiC technology to deliver zero reverse recovery and minimal switching losses, making it ideal for high-frequency applications. The diode offers a typical forward voltage of 1.5V at 6A and 25°C, with a maximum of 1.7V. Reverse current is typically 20 µA at 25°C and 600V.
Electrical characteristics include a repetitive peak reverse voltage of 600V, continuous forward current of 6A at TC=100°C, and a surge non-repetitive forward current of 21.5A. Total capacitive charge is 21 nC, and the device operates over a junction temperature range of -55°C to 175°C. Thermal resistance junction-to-case is 2.6 K/W, allowing effective heat dissipation.
The SDP06S60 is offered in the industry-standard TO-220-3 through-hole package (PG-TO220-3-1). It is suitable for power factor correction circuits, switch-mode power supplies, and other high-efficiency rectification applications. The part is manufactured by Infineon Technologies and is intended for use in designs requiring high reliability and low losses.
| Qty | Low | High |
|---|---|---|
| 500+ | $4.09 | $4.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
6A at TC=100°C.
Typical 1.5V at 6A and 25°C, maximum 1.7V.
0 ns (no recovery time).
TO-220-3 (PG-TO220-3-1).
-55°C to 175°C.
21 nC at VR=400V, IF=6A, diF/dt=200A/µs, Tj=150°C.