| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,417 pcs
|
3417 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Diode Configuration | |
| Forward Current | |
| Forward Voltage | |
| Junction Temperature | |
| Mounting Type | |
| Reverse Voltage | |
| Technology |
The Infineon Technologies SDB20S30 is a Silicon Carbide (SiC) Schottky diode array designed for high-efficiency rectification. It features two diodes in a common cathode configuration, operating at up to 300V reverse voltage and 10A continuous forward current per diode.
Key electrical specifications include a maximum forward voltage drop of 1.7V at 10A and a reverse leakage current of 200 µA at 300V. The diode array boasts zero reverse recovery time, making it ideal for high-speed switching applications. It operates within a junction temperature range of -55°C to +175°C.
Packaged in a TO-263-3, D²Pak surface-mount case, the SDB20S30 is suitable for various power electronics applications. These include power supplies, switched-mode power converters, solar inverters, and motor drives, particularly in environments requiring high switching frequency and elevated temperature capabilities.
This obsolete product is available in limited stock. Its SiC Schottky technology offers improved switching performance and efficiency compared to traditional diodes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage for the SDB20S30 is 300 V.
The continuous forward current rating per diode is 10 A.
The forward voltage drop at 10A is a maximum of 1.7 V.
The reverse leakage current at 300V is 200 µA.
The SDB20S30 has a reverse recovery time of 0 ns.
The operating junction temperature range is -55°C to +175°C.
The SDB20S30 uses SiC Schottky technology.