| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | 9835 | On Request | On Request |
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The SD2904 from STMicroelectronics is a gold metallized N-Channel MOS field-effect RF power transistor. It is engineered for 28V DC large signal applications, operating effectively up to 500 MHz.
Key electrical specifications include a maximum drain current of 5A and a power dissipation of 100W. At 400 MHz and 28V, it delivers a minimum output power of 30W with a power gain ranging from 9.5 to 11.5 dB and a drain efficiency of 45-55%. The transistor exhibits excellent thermal stability with a junction-to-case thermal resistance of 1.75 °C/W.
This RF power transistor is suitable for Class A or AB operation. Its common source configuration and gold metallization ensure reliability in demanding RF power applications. The M113 package is standard for this device.
Applications include high-frequency power amplification in HF, VHF, and UHF bands. Its robust design and specified performance characteristics make it a reliable choice for various RF power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SD2904 operates at a typical drain supply voltage (VDD) of 28V.
The SD2904 is available in the M113 package.
The maximum operating junction temperature is 200°C.
The SD2904 delivers a minimum output power of 30W at 400 MHz with a 28V supply.
The SD2904 operates over a frequency range of 2 to 500 MHz.
The maximum drain current rating is 5A.