| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Turn On Time |
The SD210DE from Linear Integrated Systems (SIL) is an N-channel enhancement mode MOSFET engineered for high-speed, low-glitch switching in audio, video, and high-frequency applications. It utilizes a lateral construction to achieve ultra-fast switching speeds and low capacitance.
Key electrical specifications include a Drain-Source Breakdown Voltage of 30V, a maximum Gate Threshold Voltage of 1.5V, and a low maximum On-Resistance of 45Ω at 10V Gate-Source voltage. The device boasts an ultra-low Reverse Transfer Capacitance of 0.5pF and a fast Turn-On Time of 2ns, contributing to high-speed system performance and low insertion loss at high frequencies.
This MOSFET is suitable for applications such as fast analog switches, sample-and-holds, pixel-rate switching, DAC deglitchers, and high-speed drivers. It operates within a junction temperature range of -55 to 125°C and has a power dissipation of 300mW. The device is packaged in a TO-206AF (TO-72) through-hole package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Static Drain-Source Breakdown Voltage is 30V.
The maximum Gate Threshold Voltage is 1.5V.
The Turn-On Time is a maximum of 2ns.
The SD210DE is available in a TO-206AF (TO-72) package.
The operating junction temperature range is -55 to 125°C.