| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics SD1729 is a Class AB epitaxial silicon NPN planar transistor specifically optimized for SSB (Single Sideband) communications. It operates at 28 volts and is designed for applications up to 30 MHz.
Key electrical specifications include a minimum power output (POUT) of 130 W PEP with a minimum power gain (GP) of 12 dB. The transistor achieves a low intermodulation distortion (IMD) of -30 dBc and a minimum collector efficiency (ηc) of 37% under specified test conditions. It also features a typical common-base capacitance (COB) of 220 pF at 1 MHz.
This device utilizes emitter ballasting for enhanced ruggedness under demanding operating conditions. The SD1729 is housed in an M174 plastic package suitable for through-hole mounting and is supplied in trays.
Absolute maximum ratings include a collector-base voltage (VCBO) of 70V, collector-emitter voltage (VCEO) of 35V, and a device current (IC) of 12A. The junction temperature can reach up to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage of the SD1729 is 70V.
The maximum collector-emitter voltage of the SD1729 is 35V.
The maximum device current for the SD1729 is 12A.
The SD1729 is packaged in an M174 case with through-hole mounting.
The maximum junction temperature for the SD1729 is 200°C.
Yes, the SD1729 is RoHS3 compliant.