| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,600 pcs
|
15600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics SCTWA70N120G2V-4 is a discrete N-Channel MOSFET belonging to the Metal Oxide Semiconductor technology family. It features a high Drain to Source Voltage (Vdss) of 1200V and a continuous current (Tc) capability of 91A. The MOSFET exhibits a maximum On-Resistance (Rds On) of 30mOhm at 50A and 18V gate drive voltage. Its gate threshold voltage (Vgs(th)) is a maximum of 4.9V at 1mA, with a maximum gate voltage (Vgs) of +22V and -10V.
This component operates within a wide temperature range of -55°C to 200°C (TJ) and has a maximum power dissipation of 547W. The input capacitance (Ciss) is 3540 pF at 800V, and the gate charge (Qg) is 150 nC at 18V. The SCTWA70N120G2V-4 is packaged in a TO-247-4 configuration and is designed for through-hole mounting.
Key electrical characteristics include its N-Channel FET type and the Metal Oxide technology. The high voltage and current ratings make it suitable for various power applications requiring robust performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
-55°C to 200°C (junction temperature).
TO-247-4.
150 nC at Vgs = 18V.
30 mOhm at Id = 50A, Vgs = 18V.
Maximum 4.9V at Id = 1mA.
547W.