Mfr Part #:

SCTWA60N120G2-4

The STMicroelectronics SCTWA60N120G2-4 is a Silicon Carbide Power MOSFET designed for high-performance applications. It features a 1200V drain-to-source voltage and a 60A current rating.

✓ Total Stock: 3,600 pcs

$ Price Range: $18.03

SCTWA60N120G2-4 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	3,600 pcs On Request	3600 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SCTWA60N120G2-4 Description

Short technical summary and product information.

The SCTWA60N120G2-4 from STMicroelectronics is a high-performance N-Channel Silicon Carbide (SiC) Power MOSFET. This device is rated for a drain-to-source voltage (Vdss) of 1200V and can handle a continuous current of 60A (Tc). It features a low on-resistance (Rds On) of 52mOhm at 30A and 18V, and a maximum power dissipation of 388W (Tc).

The MOSFET operates within a temperature range of -55°C to 200°C (TJ). It utilizes SiCFET technology, offering advantages in terms of efficiency and thermal performance compared to traditional silicon MOSFETs. The input capacitance (Ciss) is 1969 pF at 800V, and the gate charge (Qg) is 94 nC at 18V.

Packaged in a TO-247-4 configuration, the SCTWA60N120G2-4 is designed for through-hole mounting. The gate-to-source voltage (Vgs) limits are +22V and -10V, with a gate threshold voltage (Vgs(th)) of 5V at 1mA. The drive voltage for optimal Rds On is 18V.

This component is suitable for various power electronics applications where high voltage, high current, and efficient switching are required. Its SiC technology makes it particularly well-suited for demanding environments.

SCTWA60N120G2-4 Quick Information

Product Type: MOSFET

Canonical Name: SCTWA60N120G2-4 Silicon Carbide Power MOSFET

Subcategory: Power MOSFET

SCTWA60N120G2-4 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SCTWA60N120G2-4 Estimated Pricing

Qty	Low	High
1+	$18.03	$18.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

SCTWA60N120G2-4 Features

1200V drain-to-source voltage rating.
60A continuous current capability.
Silicon Carbide FET technology.
Low on-resistance of 52mOhm.
TO-247-4 through-hole package.

SCTWA60N120G2-4 Applications

High-voltage power conversion circuits.
Efficient switching power supplies.
Automotive power electronics.
Industrial motor drives.
Renewable energy systems.

SCTWA60N120G2-4 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the SCTWA60N120G2-4?

1200V.

What package is the SCTWA60N120G2-4 available in?

TO-247-4 through-hole package.

What is the operating temperature range of this MOSFET?

-55°C to 200°C junction temperature.

What is the gate charge of the SCTWA60N120G2-4?

94nC at 18V gate-source voltage.

What is the typical on-resistance of the SCTWA60N120G2-4?

52mOhm at 30A, 18V.

What is the gate threshold voltage?

5V at 1mA drain current.

What is the maximum continuous drain current?

60A at case temperature.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Current	60A (Tc)
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 200°C (TJ)
Power Dissipation (Max)	388W (Tc)
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 18V
SVHC Present	Not Present
Supplier Device Package	TO-247-4
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	5V @ 1mA