| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,440 pcs
|
1440 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel Silicon Carbide FET from STMicroelectronics, part number SCTW70N120G2V, is suitable for demanding power applications. It offers a high drain-source voltage (Vdss) of 1200V and a continuous drain current of 91A at case temperature.
The device utilizes Silicon Carbide (SiC) technology, providing superior performance characteristics compared to traditional silicon. Key electrical specifications include a maximum on-resistance (Rds On) of 30mOhm at 50A and 18V gate drive, and a gate charge (Qg) of 150nC at 18V.
With an operating temperature range of -55°C to 200°C (TJ), this FET is built for robust performance. It is packaged in a TO-247-3 case and features through-hole mounting for easy integration into circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 1200 V.
The continuous current rating is 91A at case temperature.
The maximum on-resistance (Rds On) is 30mOhm when measured at 50A drain current and 18V gate-source voltage.
The operating temperature range is -55°C to 200°C (TJ).
It is supplied in a TO-247-3 package.
It is mounted using the through-hole method.