| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,760 pcs
|
2760 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SCTW40N120G2VAG from STMicroelectronics is a high-performance N-Channel Silicon Carbide Field-Effect Transistor (SiCFET). This device is built using advanced second-generation SiC MOSFET technology, offering exceptionally low on-resistance per unit area.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 33A at 25°C. The on-resistance (Rds On) is rated at a maximum of 105mOhm at 20A and 18V gate drive voltage. The gate charge (Qg) is a maximum of 63nC at 18V, and the input capacitance (Ciss) is 1230pF at 800V.
The device operates within a wide temperature range of -55°C to 200°C (TJ) and has a maximum power dissipation of 290W (Tc). It is suitable for demanding applications requiring high efficiency and reliability.
Packaged in a TO-247-3 through-hole configuration, the SCTW40N120G2VAG is designed for robust power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 1200V.
The continuous drain current (Id) is 33A at 25°C case temperature.
The maximum on-resistance (Rds On) is 105mOhm at 20A drain current and 18V gate-source voltage.
The operating junction temperature range is -55°C to 200°C.
It uses a TO-247-3 through-hole package with a HiP247™ supplier device package.
The maximum gate charge (Qg) is 63nC at 18V gate-source voltage.
The maximum input capacitance (Ciss) is 1230pF at 800V drain-source voltage.