| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| Efficiency | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics SCTW35N65G2V is a Silicon Carbide (SiC) Power MOSFET. It operates with a high switching frequency of 70 kHz, enabling efficiencies greater than 98%. This component is designed for applications requiring high power density and performance.
Key electrical characteristics include a high efficiency rating and a power factor greater than 0.99. The device is suitable for demanding power applications where optimization of passive components is beneficial.
This part is a component of the STDES-VRECTFD reference design, a three-phase AC-DC power converter. The reference design utilizes SiC MOSFETs and diodes for high-frequency operation and reduced size and weight of passive elements.