SCTL90N65G2V The SCTL90N65G2V is an N-Channel Silicon Carbide MOSFET from STMicroelectronics. It features a 650V drain-to-source voltage and a 40A continuous drain current.
Mfr Part #:

SCTL90N65G2V

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The SCTL90N65G2V is an N-Channel Silicon Carbide MOSFET from STMicroelectronics. It features a 650V drain-to-source voltage and a 40A continuous drain current.
✓ Total Stock: 6,598 pcs
$ Price Range: $0.99

SCTL90N65G2V Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SCTL90N65G2V Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SCTL90N65G2V Description

Short technical summary and product information.

The STMicroelectronics SCTL90N65G2V is an N-Channel Silicon Carbide (SiC) Power MOSFET designed for high-performance applications. It offers a high drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 40A at a case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 24mOhm at 40A and 18V, and a gate charge (Qg) of 157nC at 18V. The gate-source voltage (Vgs) has a maximum rating of +22V and -10V, with a threshold voltage (Vgs(th)) of 5V at 1mA. Input capacitance (Ciss) is rated at 3380pF at 400V.

 

This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in an 8-PowerVDFN package with a surface mount type. The technology utilized is Silicon Carbide (SiCFET), providing advantages in efficiency and power handling compared to traditional silicon MOSFETs. The maximum power dissipation is 935W (Tc).

 

Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.

SCTL90N65G2V Quick Information

Product Type: MOSFET
Canonical Name: SCTL90N65G2V N-Channel Silicon Carbide Power MOSFET
Subcategory: N-Channel

SCTL90N65G2V Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SCTL90N65G2V Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SCTL90N65G2V Features

  • N-Channel Silicon Carbide Power MOSFET
  • 650V Drain-to-Source Voltage
  • 40A Continuous Drain Current
  • 24mOhm Max On-Resistance
  • Surface Mount 8-PowerVDFN Package

SCTL90N65G2V Applications

  • High-voltage DC-DC converter power stages.
  • AC-DC power supply PFC and inverter circuits.
  • Electric vehicle traction inverter modules.
  • Industrial motor drive and servo systems.
  • Solar inverter and energy storage systems.

SCTL90N65G2V FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SCTL90N65G2V?

The maximum drain-to-source voltage is 650V.

What is the continuous drain current rating?

The continuous drain current is 40A at case temperature.

What is the maximum on-resistance?

The maximum on-resistance is 24mOhm at 40A drain current and 18V gate drive.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the SCTL90N65G2V available in?

It is available in a PowerFlat (8x8) HV surface-mount package, case code 8-PowerVDFN.

What is the gate charge of this MOSFET?

The maximum gate charge is 157nC at 18V gate-source voltage.

What is the input capacitance?

The maximum input capacitance is 3380pF at 400V drain-source voltage.

Home
Account

Categories