Mfr Part #:

SCTL90N65G2V

Name: SCTL90N65G2V
Brand: STMicroelectronics
SKU: SCTL90N65G2V
Availability: InStock

Mfr Name: STMicroelectronics

Description:

SILICON CARBIDE POWER MOSFET 650

✓ Total Stock: 6,556 pcs

SCTL90N65G2V Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	1,776 pcs On Request	1776 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	1,780 pcs On Request	1780 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

SILICON CARBIDE POWER MOSFET 650

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Current	40A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	935W (Tc)
Rds On (Max) @ Id, Vgs	24mOhm @ 40A, 18V
Supplier Device Package	PowerFlat (8x8) HV
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	5V @ 1mA