| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics SCTL35N65G2V is a high-performance N-Channel Silicon Carbide Field-Effect Transistor (SiCFET) designed for demanding applications. It offers a robust 650V drain-to-source voltage and a maximum continuous drain current of 40A (Tc).
Key electrical characteristics include a low maximum on-resistance of 67mOhm at 20A and 20V, and a gate charge of 73nC at 20V. The operating temperature range is -55°C to 175°C (TJ).
This device utilizes SiCFET technology and comes in a compact 8-PowerVDFN package, specifically the PowerFlat™ (8x8) HV variant. It is designed for surface mount applications, providing efficient thermal performance with a maximum power dissipation of 417W (Tc).
The SCTL35N65G2V is RoHS3 compliant and has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
8-PowerVDFN (PowerFlat™ 8x8 HV) surface-mount package.
-55°C to 175°C (junction temperature).
73 nC at Vgs = 20V.
67 mOhm maximum at Id = 20A, Vgs = 20V.
SiCFET (Silicon Carbide).
40A at case temperature (Tc).