| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics SCTH90N65G2V-7 is a high-voltage N-Channel Silicon Carbide Field-Effect Transistor (SiCFET) MOSFET. It is designed for demanding power applications, featuring a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 90A at 25°C case temperature.
The MOSFET has a low on-resistance (Rds On) of 26mOhm at 50A and 18V gate drive, contributing to efficient power conversion. Its input capacitance (Ciss) is 3300pF at 400V, and gate charge (Qg) is 157nC at 18V.
Operating within a temperature range of -55°C to 175°C (TJ), this device is suitable for various environmental conditions. The technology utilized is Silicon Carbide (SiCFET), offering advantages in high-frequency and high-temperature performance compared to traditional silicon MOSFETs.
The SCTH90N65G2V-7 comes in a TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package, designed for surface mounting. This package type facilitates integration into compact power electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous drain current is 90A at 25°C case temperature.
The Rds On is a maximum of 26mOhm when the drain current is 50A and gate-source voltage is 18V.
The operating temperature range is -55°C to 175°C (TJ).
This MOSFET uses SiCFET (Silicon Carbide) technology.
It is supplied in a TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package.
The mounting type is Surface Mount.