| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics SCTH40N120G2V7AG is a high-performance N-Channel Silicon Carbide FET (SiCFET) designed for demanding applications. This MOSFET features a robust 650V drain-to-source voltage (Vdss) and can handle a continuous drain current of 33A at a case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 105mOhm at 20A and 18V, a gate charge (Qg) of 63nC at 18V, and an input capacitance (Ciss) of 1230pF at 800V. The gate threshold voltage (Vgs(th)) is 5V at 1mA, with a maximum gate-source voltage (Vgs) of ±22V.
Operating across a wide temperature range from -55°C to 175°C (TJ), this device has a maximum power dissipation of 250W. It is housed in a TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package, suitable for surface mount applications.
The SCTH40N120G2V7AG is RoHS3 compliant and has an MSL 1 (Unlimited) rating, indicating its suitability for various industrial and commercial designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 650 V.
The continuous drain current is 33A.
The Rds On (Max) is 105mOhm at 20A and 18V.
The operating temperature range is -55°C to 175°C (TJ).
It uses Silicon Carbide FET (SiCFET) technology.
The package is TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, suitable for surface mounting.
Yes, it is RoHS3 compliant.