SCTH100N65G2-7AG The STMicroelectronics SCTH100N65G2-7AG is an N-Channel SiCFET with a 650V drain-source voltage and 95A current rating. It is designed for surface mount applications.
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SCTH100N65G2-7AG

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics SCTH100N65G2-7AG is an N-Channel SiCFET with a 650V drain-source voltage and 95A current rating. It is designed for surface mount applications.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

SCTH100N65G2-7AG Available from 1 distributor

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SCTH100N65G2-7AG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SCTH100N65G2-7AG Description

Short technical summary and product information.

The STMicroelectronics SCTH100N65G2-7AG is a high-performance N-Channel Silicon Carbide Field-Effect Transistor (SiCFET). It offers a robust 650V drain-source voltage (Vdss) and a significant current handling capability of 95A at a case temperature (Tc).

 

Key electrical characteristics include a low maximum on-resistance (Rds On) of 26mOhm at 50A and 18V, and a gate charge (Qg) of 162nC at 18V. The device operates within a temperature range of -55°C to 175°C (TJ).

 

This SiCFET is housed in a TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package, also known as H2PAK-7, and is designed for surface mount applications. Its technology is based on Silicon Carbide, offering advantages in high-voltage and high-frequency applications.

 

The SCTH100N65G2-7AG is suitable for power electronics designs requiring high efficiency and reliability.

SCTH100N65G2-7AG Quick Information

Product Type: N-Channel SiCFET
Canonical Name: STMicroelectronics SCTH100N65G2-7AG N-Channel SiCFET
Subcategory: SiCFET

SCTH100N65G2-7AG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SCTH100N65G2-7AG Estimated Pricing

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Estimated market price range - modelled values for guidance only, not live distributor offers.

SCTH100N65G2-7AG Features

  • 650V drain-source voltage rating.
  • 95A continuous current capability.
  • Low 26mOhm maximum Rds On.
  • Surface mount TO-263-8 (H2PAK-7) package.
  • Silicon Carbide (SiCFET) technology.

SCTH100N65G2-7AG Applications

  • Ideal for high-voltage power supplies.
  • Suitable for switching power applications.
  • Used in industrial motor drives.
  • Applicable in renewable energy systems.

SCTH100N65G2-7AG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SCTH100N65G2-7AG?

The drain-source voltage (Vdss) is 650V.

What is the maximum continuous current rating?

The maximum continuous current rating is 95A.

What is the Rds On at specified conditions?

The Rds On is a maximum of 26mOhm at 50A and 18V.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What type of transistor is the SCTH100N65G2-7AG?

It is an N-Channel SiCFET (Silicon Carbide Field-Effect Transistor).

How is the SCTH100N65G2-7AG mounted?

It is a surface mount device.

What is the package type?

The package is TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, also known as H2PAK-7.

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