| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,580 pcs
|
2580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics SCT50N120 is a high-performance N-Channel Silicon Carbide Field-Effect Transistor (SiCFET) designed for demanding power applications. It offers a robust 1200V drain-to-source voltage (Vdss) and a significant continuous drain current capability of 65A at the case temperature.
This MOSFET features a low on-resistance of 69mOhm maximum at 40A and 20V gate drive, contributing to efficient power conversion. The input capacitance (Ciss) is 1900 pF at 400V, and the gate charge (Qg) is 122 nC maximum at 20V.
Packaged in a TO-247-3 through-hole configuration, the SCT50N120 is suitable for various power electronics designs. It operates within a wide temperature range of -55°C to 200°C (TJ) and has a maximum power dissipation of 318W (Tc).
This component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
TO-247-3 with HiP247 supplier device package.
-55°C to 200°C junction temperature.
69mOhm at 40A and 20V gate drive.
122nC at 20V gate-source voltage.
Silicon Carbide (SiCFET).
Through hole.