SCT3160KLGC11 The ROHM Semiconductor SCT3160KLGC11 is a N-Channel SiC FET with a 1200V drain-source voltage and 17A current rating. It is housed in a TO-247N package.
Mfr Part #:

SCT3160KLGC11

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor SCT3160KLGC11 is a N-Channel SiC FET with a 1200V drain-source voltage and 17A current rating. It is housed in a TO-247N package.
✓ Total Stock: 631 pcs
$ Price Range: $0.99

SCT3160KLGC11 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
571 pcs
571 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
60 pcs
60 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

SCT3160KLGC11 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SCT3160KLGC11 Description

Short technical summary and product information.

The ROHM Semiconductor SCT3160KLGC11 is a high-performance N-Channel Silicon Carbide (SiC) Field-Effect Transistor (FET). It is designed for demanding applications requiring high voltage and current handling capabilities.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 1200V and a continuous current rating of 17A at a case temperature (Tc). The Rds On (Max) is 208mOhm at 5A and 18V gate-source voltage, with a gate charge (Qg) of 42nC at 18V. The input capacitance (Ciss) is 398pF at 800V.

 

This SiC FET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 103W (Tc). The gate-to-source voltage (Vgs) limits are +22V and -4V, with a gate threshold voltage (Vgs(th)) of 5.6V at 2.5mA.

 

The SCT3160KLGC11 is packaged in a TO-247-3 configuration, suitable for through-hole mounting. Its SiCFET technology offers advantages in terms of efficiency and performance compared to traditional silicon MOSFETs.

SCT3160KLGC11 Quick Information

Product Type: SiC FET
Canonical Name: ROHM Semiconductor SCT3160KLGC11 N-Channel SiC FET
Subcategory: SiC FET

SCT3160KLGC11 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SCT3160KLGC11 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SCT3160KLGC11 Features

  • 1200V drain-source voltage rating.
  • 17A continuous current capability.
  • Low Rds On of 208mOhm maximum.
  • SiCFET technology for high performance.
  • TO-247N package for through-hole mounting.

SCT3160KLGC11 Applications

  • Suitable for high-voltage power systems.
  • Ideal for efficient power conversion.
  • Used in demanding industrial applications.
  • Enables robust circuit designs.

SCT3160KLGC11 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SCT3160KLGC11?

The maximum drain-source voltage (Vdss) is 1200V.

What is the continuous current rating of the SCT3160KLGC11?

The continuous current rating is 17A.

What is the maximum Rds On for this SiC FET?

The maximum Rds On is 208mOhm at 5A and 18V.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the SCT3160KLGC11 supplied in?

It is supplied in a TO-247-3 package.

What is the RoHS status of the SCT3160KLGC11?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1 Unlimited.

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