| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,667 pcs
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3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor SCT3120ALGC11 is a high-performance N-Channel Silicon Carbide (SiC) Field Effect Transistor (FET). It is designed for demanding applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 21A at 25°C case temperature. The on-resistance (Rds On) is rated at a maximum of 156mOhm at 6.7A and 18V gate-source voltage. The gate charge (Qg) is 38 nC maximum at 18V, and input capacitance (Ciss) is 460 pF maximum at 500V.
This SiC FET operates within a temperature range of -55°C to 175°C (TJ). It features a gate threshold voltage (Vgs(th)) of 5.6V maximum at 3.33mA and a maximum gate-source voltage of +22V/-4V.
The SCT3120ALGC11 is housed in a TO-247-3 package and utilizes through-hole mounting. Its technology is based on Silicon Carbide (SiCFET), offering advantages in terms of efficiency and performance compared to traditional silicon MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-247N (TO-247-3) through-hole package.
175°C.
156 mOhm at 6.7A, 18V.
38 nC at 18V.
460 pF at 500V.
103W at case temperature.