| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90 pcs
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90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor SCT3080ALGC11 is a high-performance N-Channel Silicon Carbide Field Effect Transistor (SiCFET) MOSFET. It is designed for demanding power applications, featuring a robust 650V drain-to-source voltage capability and a continuous drain current rating of 30A at case temperature.
Key electrical characteristics include a maximum on-resistance of 104mOhm at 10A and 18V, and a gate charge of 48nC at 18V. The device operates within a temperature range of -55°C to 175°C (TJ).
This MOSFET is housed in a TO-247-3 package, suitable for through-hole mounting. Its SiCFET technology provides advantages in high-frequency switching and power efficiency compared to traditional silicon MOSFETs.
With a maximum power dissipation of 134W (Tc), the SCT3080ALGC11 is suitable for various power conversion and management systems where high voltage and current handling are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the SCT3080ALGC11 is 650V.
The SCT3080ALGC11 has a continuous drain current rating of 30A at case temperature.
The maximum on-resistance (Rds On) for the SCT3080ALGC11 is 104mOhm when measured at 10A drain current and 18V gate-source voltage.
The operating temperature range (TJ) for the SCT3080ALGC11 is from -55°C to 175°C.
The SCT3080ALGC11 is supplied in a TO-247-3 package.
The SCT3080ALGC11 is designed for through-hole mounting.