| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,500 pcs
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1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,470 pcs
|
1470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor SCT2H12NZGC11 is an N-Channel Silicon Carbide (SiC) Field-Effect Transistor (FET) designed for high-performance applications. It features a high drain-to-source voltage rating of 1700V and a continuous drain current capability of 3.7A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 1.5 Ohm at 1.1A drain current and 18V gate-source voltage, and a gate threshold voltage of 4V. The device supports a gate-to-source voltage range of -6V to +22V. Its input capacitance (Ciss) is rated at 184pF at 800V, and the gate charge (Qg) is 14nC at 18V.
With a maximum power dissipation of 35W and an operating junction temperature of up to 175°C, this SiC FET is suitable for demanding thermal environments. The SCT2H12NZGC11 is housed in a TO-3PFM, SC-93-3 package and is designed for through-hole mounting.
This component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 1700V.
The continuous drain current is 3.7A.
The maximum on-resistance (Rds On) is 1.5 Ohm at 1.1A drain current and 18V gate-source voltage.
The operating temperature is 175°C.
This MOSFET uses Silicon Carbide (SiC) technology.
The package is TO-3PFM, SC-93-3 and it is a through-hole mount type.
Yes, this product is RoHS3 Compliant.