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SCT20N120H The STMicroelectronics SCT20N120H is an N-Channel Silicon Carbide FET (SiCFET) designed for high-voltage applications. It offers a 1200V drain-source voltage and a 20A continuous current rating.
Mfr Part #:

SCT20N120H

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics SCT20N120H is an N-Channel Silicon Carbide FET (SiCFET) designed for high-voltage applications. It offers a 1200V drain-source voltage and a 20A continuous current rating.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

SCT20N120H Available from 1 distributor

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✓ Non-Authorised
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3,000 pcs
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SCT20N120H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SCT20N120H Description

Short technical summary and product information.

This STMicroelectronics SCT20N120H is a high-performance N-Channel Silicon Carbide Field-Effect Transistor (SiCFET). It is rated for a maximum drain-source voltage (Vdss) of 1200V and can handle a continuous current of 20A at the case temperature.

 

The device features a low on-resistance (Rds On) of 290mOhm at 10A and 20V gate drive, with a gate charge (Qg) of 45nC. The operating temperature range is from -55°C to 200°C (TJ), making it suitable for demanding thermal environments.

 

Packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (H2Pak-2) format, this MOSFET is designed for surface mount applications. Its SiCFET technology provides advantages in high-frequency switching and power efficiency compared to traditional silicon MOSFETs.

 

Key electrical parameters include an input capacitance (Ciss) of 650pF at 400V and a gate threshold voltage (Vgs(th)) of 3.5V at 1mA. The maximum gate-source voltage is ±25V, with a negative limit of -10V.

SCT20N120H Quick Information

Product Type: N-Channel MOSFET
Canonical Name: STMicroelectronics SCT20N120H N-Channel SiCFET
Subcategory: N-Channel

SCT20N120H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SCT20N120H Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SCT20N120H Features

  • 1200V drain-source voltage rating.
  • 20A continuous current capability.
  • 290mOhm maximum on-resistance.
  • Wide -55°C to 200°C operating temperature.
  • Surface mount TO-263 package.

SCT20N120H Applications

  • High-voltage power conversion circuits.
  • Switch-mode power supplies.
  • Motor control applications.
  • Industrial power systems.

SCT20N120H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SCT20N120H?

1200V.

What package is the SCT20N120H available in?

Surface mount TO-263-3 (D2Pak) with H2Pak-2 supplier package.

What is the operating junction temperature range?

-55°C to 200°C.

What is the maximum continuous drain current?

20A at case temperature.

What is the maximum on-resistance?

290mOhm at 10A and 20V gate drive.

What is the gate charge?

45nC at 20V gate voltage.

What is the input capacitance?

650pF at 400V drain-source voltage.

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